GaN and SiC Accelerate Penetration as ACE 2026 Power Device Zone Debuts in Shenzhen
2026-09-13 · Compiled by Best IT Parts from public industry reporting
At the ACE 2026 (Autumn) Asia Charging Expo in Shenzhen on September 11, more than a dozen power semiconductor vendors — including Guodewoke, Xinzhi Technology, Shenai Semiconductor, Lihong Micro, Sarui Micro, Ark Micro, Yiyuan Technology, Jahong, BASiC Semiconductor, Quanxin Micro, Yingjiatong, Jingsemite, Ansende, Hongmei Power and Zhineng Semiconductor — exhibited MOSFET, GaN, SiC and rectifier products in a dedicated power device zone. Power devices sit at the core of chargers, adapters and high-power supplies, and rising output power alongside higher power density is tightening requirements on conduction loss, switching loss, voltage rating and thermal performance. GaN continues driving miniaturization of 65W-140W and higher chargers, expanding from consumer fast chargers into laptop adapters and multi-port desktop supplies, while SiC MOSFETs and SiC diodes advance into PFC and LLC stages for gaming notebooks, robotics, eBikes, drones and kilowatt-class industrial power. Silicon MOSFETs keep improving on lower Rds(on), lower gate charge and smaller packages.
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